Tail gas treatment equipment can handle gases used in etching processes and chemical vapor deposition processes in the semiconductor, liquid crystal, and solar energy industries, including SiH4, SiH2Cl2, PH3, B2H6, TEOS, H2, CO, NF3, SF6, C2F6, WF6, NH3, N2O, and so on.
Exhauriunt Gas curatio modum
Secundum characteres exhauriunt Gas curatio, curatio potest dividi in quattuor genera curatio:
I. aqua lavare Type (curatio de mordive vapores)
II. Oxidizing Type (agitur cum combustibili et toxicus gasorum)
III. ADSORPTIONption (Secundum ad genus adsorption materiam ad agam cum correspondentes exhauriunt Gas).
4.Plasma Combustion Type (omnes genera exhauriunt vapores potest tractata).
Quisque genus curatio habet suum commoda et incommoda tum in scope application. Cum curatio modus est aqua lavare, et apparatu est cheap et simplex, et non solum tractamus aqua, soluble vapores; Et applicationem range de electrica aqua baptismata genus est altior quam aqua lavare genus, sed operatio sumptus est alta; Et arida genus habet bonum curatio efficientiam, et non convenit ad Gas influunt, quod est facile ad capax vel fluxit.
Chemicals et eorum per-products communiter in semiconductor industria potest geno secundum suum eget proprietatibus et diversis rangis:
I. Flammabiles sicut Sih4H2, etc.
II. Toxicus vapores ut Ash3, ph3, etc.
III. HF tales vapores, HCL, etc.
IV. CONSERVATORIUM gasorum ut CF4, NF3, etc.
Since the above four gases are harmful to the environment or human body, must prevent its direct emission into the atmosphere, so the general semiconductor plant are installed with a large centralized exhaust gas treatment system, but this system is only water scrubbing exhaust, so its application is limited to the long-distance water-soluble gases, and can not deal with the ever-changing and subtle division of the semiconductor process exhaust gas. Ideo necesse est eligere et compositus et correspondentes exhauriunt Gas curatio apparatu secundum Gas characteristics ex singulis processus ut solvere exhauriunt gas forsit in parvo. Sicut opus area est maxime a centralis exhauriunt Gas curatio ratio, saepe debitum ad Gas habet ducunt ad crystallization vel pulveris cum Pipeline, unde in LENTURAE Pipeline ad Gas in opere salute. Ergo in opere area opus ad configurare parva exhauriunt Gas curatio apparatu idoneam ad characteres processus Gas, ut ad redigendum stagnantibus exhauriunt Gas in opere regio, ut salus personarum.
Post tempus: Aug-10-2023